Vishay SI8499DB-T2-E1
MPNSI8499DB-T2-E1
End of Life
MOSFET P-CH 20V 16A 6MICRO FOOT
$0.7Ref. price · indicative, final on quote
Packaging6-UFBGA
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 16A (Tc) |
| Power dissipation | 2.77W (Ta), 13W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-UFBGA |
| Vgs(th) (Max) @ id | 1.3V @ 250µA |
| Rds on (Max) @ id, vgs | 32mOhm @ 1.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 1300 pF @ 10 V |