SI8487DB-T1-E1 - Vishay
MPNSI8487DB-T1-E1
End of Life
MOSFET P-CH 30V 4MICROFOOT
$0.7Ref. price · indicative, final on quote
Packaging4-UFBGA
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 4.9A (Ta) |
| Power dissipation | 1.1W (Ta), 2.7W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-UFBGA |
| Vgs(th) (Max) @ id | 1.2V @ 250µA |
| Rds on (Max) @ id, vgs | 31mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 80 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2240 pF @ 15 V |