SI8429DB-T1-E1 - Vishay
MPNSI8429DB-T1-E1
End of Life
MOSFET P-CH 8V 11.7A 4MICROFOOT
$1.06Ref. price · indicative, final on quote
Packaging4-XFBGA, CSPBGA
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 8 V |
| Drive voltage (Max rds on, min rds on) | 1.2V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 11.7A (Tc) |
| Power dissipation | 2.77W (Ta), 6.25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±5V |
| Technology | MOSFET (Metal Oxide) |
| Case | 4-XFBGA, CSPBGA |
| Vgs(th) (Max) @ id | 800mV @ 250µA |
| Rds on (Max) @ id, vgs | 35mOhm @ 1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 26 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 1640 pF @ 4 V |