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Vishay SI8406DB-T2-E1

Vishay SI8406DB-T2-E1

MPNSI8406DB-T2-E1
End of Life

MOSFET N-CH 20V 16A 6MICRO FOOT

$0.62Ref. price · indicative, final on quote
Packaging6-UFBGA
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI8406DB-T2-E1 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation2.77W (Ta), 13W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case6-UFBGA
Vgs(th) (Max) @ id850mV @ 250µA
Rds on (Max) @ id, vgs33mOhm @ 1A, 4.5V
Gate charge (Qg) (Max) @ vgs20 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds830 pF @ 10 V