SI7997DP-T1-GE3

Vishay · TrenchFET® Series

MOSFET 2P-CH 30V 60A PPAK SO-8

Vishay SI7997DP-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI7997DP-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C60A
Power - max46W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
CasePowerPAK® SO-8 Dual
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs5.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs160nC @ 10V
Input capacitance (Ciss) (Max) @ vds6200pF @ 15V
SI7997DP-T1-GE3
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