SI7942DP-T1-GE3
Vishay · TrenchFET® Series
MOSFET 2N-CH 100V 3.8A PPAK SO-8
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | 2 N-Channel (Dual) |
| Mounting | Surface Mount |
| Drain to source voltage | 100V |
| Current - continuous drain (Id) @ 25°C | 3.8A |
| Power - max | 1.4W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | PowerPAK® SO-8 Dual |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 49mOhm @ 5.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 24nC @ 10V |
SI7942DP-T1-GE3
[ALLOC] verified