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Vishay SI7820DN-T1-GE3

SI7820DN-T1-GE3

MPNSI7820DN-T1-GE3
End of Life

MOSFET N-CH 200V 1.7A PPAK1212-8

$1.58Ref. price · indicative, final on quote
PackagingPowerPAK® 1212-8
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI7820DN-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C1.7A (Ta)
Power dissipation1.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® 1212-8
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs240mOhm @ 2.6A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V