SI7450DP-T1-E3
Vishay · TrenchFET® Series
MOSFET N-CH 200V 3.2A PPAK SO-8
[IN STOCK] In Stock: 9 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.2A (Ta) |
| Power dissipation | 1.9W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | PowerPAK® SO-8 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 80mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 42 nC @ 10 V |
SI7450DP-T1-E3
[ALLOC] verified