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Vishay SI7386DP-T1-GE3

Vishay SI7386DP-T1-GE3

MPNSI7386DP-T1-GE3
End of Life

MOSFET N-CH 30V 12A PPAK SO-8

$1.66Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI7386DP-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Ta)
Power dissipation1.8W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 19A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 4.5 V