SI7326DN-T1-GE3

Vishay · TrenchFET® Series

MOSFET N-CH 30V 6.5A PPAK 1212-8

Vishay SI7326DN-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI7326DN-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6.5A (Ta)
Power dissipation1.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® 1212-8
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs19.5mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 5 V
SI7326DN-T1-GE3
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