SI7288DP-T1-GE3

Vishay · TrenchFET® Series

MOSFET 2N-CH 40V 20A PPAK SO-8

Vishay SI7288DP-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI7288DP-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage40V
Current - continuous drain (Id) @ 25°C20A
Power - max15.6W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
CasePowerPAK® SO-8 Dual
Vgs(th) (Max) @ id2.8V @ 250µA
Rds on (Max) @ id, vgs19mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs15nC @ 10V
Input capacitance (Ciss) (Max) @ vds565pF @ 20V
SI7288DP-T1-GE3
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