Skip to main content
Vishay SI7153DN-T1-GE3

Vishay SI7153DN-T1-GE3

MPNSI7153DN-T1-GE3
End of Life

MOSFET P-CH 30V 18A PPAK1212-8

$0.68Ref. price · indicative, final on quote
PackagingPowerPAK® 1212-8
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI7153DN-T1-GE3 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation52W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® 1212-8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs9.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3600 pF @ 15 V