SI7153DN-T1-GE3

Vishay

MOSFET P-CH 30V 18A PPAK1212-8

Vishay SI7153DN-T1-GE3
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[IN STOCK] In Stock: 1,958 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI7153DN-T1-GE3 specifications
Parameter / AttributeSpecification / Value
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation52W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® 1212-8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs9.5mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3600 pF @ 15 V
SI7153DN-T1-GE3
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