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Vishay SI7143DP-T1-GE3

SI7143DP-T1-GE3 - Vishay

MPNSI7143DP-T1-GE3
End of Life

MOSFET P-CH 30V 35A PPAK SO-8

$1.41Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI7143DP-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation4.2W (Ta), 35.7W (Tc)
Operating temperature-50°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id2.8V @ 250µA
Rds on (Max) @ id, vgs10mOhm @ 16.1A, 10V
Gate charge (Qg) (Max) @ vgs71 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2230 pF @ 15 V