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Vishay SI7137DP-T1-GE3

Vishay SI7137DP-T1-GE3

MPNSI7137DP-T1-GE3
End of Life

MOSFET P-CH 20V 60A PPAK SO-8

$2.34Ref. price · indicative, final on quote
PackagingPowerPAK® SO-8
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI7137DP-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation6.25W (Ta), 104W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® SO-8
Vgs(th) (Max) @ id1.4V @ 250µA
Rds on (Max) @ id, vgs1.95mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs585 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds20000 pF @ 10 V