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Vishay SI7119DN-T1-E3

Vishay SI7119DN-T1-E3

MPNSI7119DN-T1-E3
End of Life

MOSFET P-CH 200V 3.8A PPAK1212-8

$1.02Ref. price · indicative, final on quote
PackagingPowerPAK® 1212-8
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI7119DN-T1-E3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C3.8A (Tc)
Power dissipation3.7W (Ta), 52W (Tc)
Operating temperature-50°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® 1212-8
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.05Ohm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds666 pF @ 50 V