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Vishay SI7101DN-T1-GE3

SI7101DN-T1-GE3 - Vishay

MPNSI7101DN-T1-GE3
End of Life

MOSFET P-CH 30V 35A PPAK 1212-8

$1.27Ref. price · indicative, final on quote
PackagingPowerPAK® 1212-8
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI7101DN-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C35A (Tc)
Power dissipation3.7W (Ta), 52W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® 1212-8
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs7.2mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs102 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3595 pF @ 15 V