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Vishay SI6562CDQ-T1-GE3

Vishay SI6562CDQ-T1-GE3

MPNSI6562CDQ-T1-GE3
End of Life

MOSFET N/P-CH 20V 6.7A 8-TSSOP

$1.04Ref. price · indicative, final on quote
Packaging8-TSSOP (0.173", 4.40mm Width)
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI6562CDQ-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C6.7A, 6.1A
Power - max1.6W, 1.7W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-TSSOP (0.173\", 4.40mm Width)
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs22mOhm @ 5.7A, 4.5V
Gate charge (Qg) (Max) @ vgs23nC @ 10V
Input capacitance (Ciss) (Max) @ vds850pF @ 10V