SI6562CDQ-T1-GE3
Vishay · TrenchFET® Series
MOSFET N/P-CH 20V 6.7A 8-TSSOP
[IN STOCK] In Stock: 49 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N and P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 6.7A, 6.1A |
| Power - max | 1.6W, 1.7W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-TSSOP (0.173\", 4.40mm Width) |
| Vgs(th) (Max) @ id | 1.5V @ 250µA |
| Rds on (Max) @ id, vgs | 22mOhm @ 5.7A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 23nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 850pF @ 10V |
SI6562CDQ-T1-GE3
[ALLOC] verified