SI5936DU-T1-GE3

Vishay · TrenchFET® Series

MOSFET 2N-CH 30V 6A PWRPK CHPFET

Vishay SI5936DU-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI5936DU-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C6A
Power - max10.4W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CasePowerPAK® ChipFET™ Dual
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs30mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs11nC @ 10V
Input capacitance (Ciss) (Max) @ vds320pF @ 15V
SI5936DU-T1-GE3
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