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Vishay SI5908DC-T1-GE3

SI5908DC-T1-GE3 - Vishay

MPNSI5908DC-T1-GE3
End of Life

MOSFET 2N-CH 20V 4.4A 1206-8

$1.41Ref. price · indicative, final on quote
Packaging8-SMD, Flat Lead
RoHSROHS3 Compliant
SeriesTrenchFET®
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI5908DC-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C4.4A
Power - max1.1W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SMD, Flat Lead
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 4.4A, 4.5V
Gate charge (Qg) (Max) @ vgs7.5nC @ 4.5V