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Vishay SI5468DC-T1-GE3

SI5468DC-T1-GE3 - Vishay

MPNSI5468DC-T1-GE3
End of Life

MOSFET N-CH 30V 6A 1206-8

$0.5Ref. price · indicative, final on quote
Packaging8-SMD, Flat Lead
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI5468DC-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation2.3W (Ta), 5.7W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SMD, Flat Lead
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs28mOhm @ 6.8A, 10V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds435 pF @ 15 V