Vishay SI5457DC-T1-GE3
MPNSI5457DC-T1-GE3
End of Life
MOSFET P-CH 20V 6A 1206-8
$0.59Ref. price · indicative, final on quote
Packaging8-SMD, Flat Lead
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 5.7W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SMD, Flat Lead |
| Vgs(th) (Max) @ id | 1.4V @ 250µA |
| Rds on (Max) @ id, vgs | 36mOhm @ 4.9A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 38 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1000 pF @ 10 V |