Skip to main content
Vishay SI5418DU-T1-GE3

Vishay SI5418DU-T1-GE3

MPNSI5418DU-T1-GE3
End of Life

MOSFET N-CH 30V 12A PPAK

$1.34Ref. price · indicative, final on quote
PackagingPowerPAK® ChipFET™ Single
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI5418DU-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation3.1W (Ta), 31W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CasePowerPAK® ChipFET™ Single
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs14.5mOhm @ 7.7A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1350 pF @ 15 V