SI3499DV-T1-GE3
MPNSI3499DV-T1-GE3
End of Life
MOSFET P-CH 8V 5.3A 6TSOP
$1.02Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 8 V |
| Drive voltage (Max rds on, min rds on) | 1.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 5.3A (Ta) |
| Power dissipation | 1.1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±5V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 750mV @ 250µA |
| Rds on (Max) @ id, vgs | 23mOhm @ 7A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 42 nC @ 4.5 V |