SI3483DDV-T1-BE3
Vishay SI3483DDV-T1-BE3
MPNSI3483DDV-T1-BE3
End of Life
P-CHANNEL 30-V (D-S) MOSFET
$0.56Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
SeriesTrenchFET® Gen IV
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® Gen IV |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 6.4A (Ta), 8A (Tc) |
| Power dissipation | 2W (Ta), 3W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +16V, -20V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-23-6 Thin, TSOT-23-6 |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 31.2mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 580 pF @ 15 V |