SI3457CDV-T1-GE3

Vishay · TrenchFET® Series

MOSFET P-CH 30V 5.1A 6TSOP

Vishay SI3457CDV-T1-GE3
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[IN STOCK] In Stock: 3,160 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI3457CDV-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.1A (Tc)
Power dissipation2W (Ta), 3W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs74mOhm @ 4.1A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds450 pF @ 15 V
SI3457CDV-T1-GE3
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