Skip to main content
Vishay SI3456DDV-T1-BE3

Vishay SI3456DDV-T1-BE3

MPNSI3456DDV-T1-BE3
End of Life

N-CHANNEL 30-V (D-S) MOSFET

$0.38Ref. price · indicative, final on quote
PackagingSOT-23-6 Thin, TSOT-23-6
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI3456DDV-T1-BE3 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5A (Ta), 6.3A (Tc)
Power dissipation1.7W (Ta), 2.7W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds325 pF @ 15 V