SI3443BDV-T1-E3

Vishay · TrenchFET® Series

MOSFET P-CH 20V 3.6A 6TSOP

Vishay SI3443BDV-T1-E3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI3443BDV-T1-E3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C3.6A (Ta)
Power dissipation1.1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ id1.4V @ 250µA
Rds on (Max) @ id, vgs60mOhm @ 4.7A, 4.5V
Gate charge (Qg) (Max) @ vgs9 nC @ 4.5 V
SI3443BDV-T1-E3
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