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Vishay SI2377EDS-T1-BE3

Vishay SI2377EDS-T1-BE3

MPNSI2377EDS-T1-BE3
End of Life

P-CHANNEL 20-V (D-S) MOSFET

$0.5Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI2377EDS-T1-BE3 specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C3.7A (Ta), 4.4A (Tc)
Power dissipation1.25W (Ta), 1.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs61mOhm @ 3.2A, 4.5V
Gate charge (Qg) (Max) @ vgs21 nC @ 8 V