Vishay SI2367DS-T1-GE3
MPNSI2367DS-T1-GE3
End of Life
MOSFET P-CH 20V 3.8A SOT23-3
$0.42Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 3.8A (Tc) |
| Power dissipation | 960mW (Ta), 1.7W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 66mOhm @ 2.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 23 nC @ 8 V |
| Input capacitance (Ciss) (Max) @ vds | 561 pF @ 10 V |