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Vishay SI2338DS-T1-BE3

Vishay SI2338DS-T1-BE3

MPNSI2338DS-T1-BE3
End of Life

N-CHANNEL 30-V (D-S) MOSFET

$0.51Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI2338DS-T1-BE3 specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.5A (Ta), 6A (Tc)
Power dissipation1.3W (Ta), 2.5W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs28mOhm @ 5.5A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds424 pF @ 15 V