Vishay SI2337DS-T1-E3
MPNSI2337DS-T1-E3
End of Life
MOSFET P-CH 80V 2.2A SOT23-3
$1.02Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 2.2A (Tc) |
| Power dissipation | 760mW (Ta), 2.5W (Tc) |
| Operating temperature | -50°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 270mOhm @ 1.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 500 pF @ 40 V |