SI2333DS-T1-GE3
Vishay · TrenchFET® Series
MOSFET P-CH 12V 4.1A SOT23-3
[IN STOCK] In Stock: 1,426 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 12 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 4.1A (Ta) |
| Power dissipation | 750mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 32mOhm @ 5.3A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1100 pF @ 6 V |
SI2333DS-T1-GE3
[ALLOC] verified