Vishay SI2316DS-T1-E3
MPNSI2316DS-T1-E3
End of Life
MOSFET N-CH 30V 2.9A SOT23-3
$0.84Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 2.9A (Ta) |
| Power dissipation | 700mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 800mV @ 250µA (Min) |
| Rds on (Max) @ id, vgs | 50mOhm @ 3.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 215 pF @ 15 V |