SI2315BDS-T1-GE3 - Vishay
MPNSI2315BDS-T1-GE3
End of Life
MOSFET P-CH 12V 3A SOT23-3
$0.68Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 12 V |
| Drive voltage (Max rds on, min rds on) | 4.5V |
| Current - continuous drain (Id) @ 25°C | 3A (Ta) |
| Power dissipation | 750mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 900mV @ 250µA |
| Rds on (Max) @ id, vgs | 50mOhm @ 3.85A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 715 pF @ 6 V |