Vishay SI2309CDS-T1-BE3
MPNSI2309CDS-T1-BE3
End of Life
P-CHANNEL 60-V (D-S) MOSFET
$0.53Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 1.2A (Ta), 1.6A (Tc) |
| Power dissipation | 1W (Ta), 1.7W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 345mOhm @ 1.25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.1 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 210 pF @ 30 V |