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Vishay SI2307CDS-T1-GE3

Vishay SI2307CDS-T1-GE3

MPNSI2307CDS-T1-GE3
End of Life

MOSFET P-CH 30V 3.5A SOT23-3

$0.52Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI2307CDS-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3.5A (Tc)
Power dissipation1.1W (Ta), 1.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs88mOhm @ 3.5A, 10V
Gate charge (Qg) (Max) @ vgs6.2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds340 pF @ 15 V