SI2306BDS-T1-E3
Vishay · TrenchFET® Series
MOSFET N-CH 30V 3.16A SOT23-3
[IN STOCK] In Stock: 22,962 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.16A (Ta) |
| Power dissipation | 750mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 47mOhm @ 3.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 4.5 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 305 pF @ 15 V |
SI2306BDS-T1-E3
[ALLOC] verified