Vishay SI1965DH-T1-GE3
MPNSI1965DH-T1-GE3
End of Life
MOSFET 2P-CH 12V 1.3A SC70-6
$0.49Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| Mounting | Surface Mount |
| Drain to source voltage | 12V |
| Current - continuous drain (Id) @ 25°C | 1.3A |
| Power - max | 1.25W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Logic Level Gate |
| Configuration | 2 P-Channel (Dual) |
| Case | 6-TSSOP, SC-88, SOT-363 |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 390mOhm @ 1A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 4.2nC @ 8V |
| Input capacitance (Ciss) (Max) @ vds | 120pF @ 6V |