SI1965DH-T1-GE3

Vishay · TrenchFET® Series

MOSFET 2P-CH 12V 1.3A SC70-6

Vishay SI1965DH-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI1965DH-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
MountingSurface Mount
Drain to source voltage12V
Current - continuous drain (Id) @ 25°C1.3A
Power - max1.25W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET featureLogic Level Gate
Configuration2 P-Channel (Dual)
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs390mOhm @ 1A, 4.5V
Gate charge (Qg) (Max) @ vgs4.2nC @ 8V
Input capacitance (Ciss) (Max) @ vds120pF @ 6V
SI1965DH-T1-GE3
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