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Vishay SI1926DL-T1-GE3

Vishay SI1926DL-T1-GE3

MPNSI1926DL-T1-GE3
End of Life

MOSFET 2N-CH 60V 0.37A SOT363

$0.42Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI1926DL-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C370mA
Power - max510mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs1.4Ohm @ 340mA, 10V
Gate charge (Qg) (Max) @ vgs1.4nC @ 10V
Input capacitance (Ciss) (Max) @ vds18.5pF @ 30V