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Vishay SI1499DH-T1-GE3

Vishay SI1499DH-T1-GE3

MPNSI1499DH-T1-GE3
End of Life

MOSFET P-CH 8V 1.6A SC70-6

$0.68Ref. price · indicative, final on quote
Packaging6-TSSOP, SC-88, SOT-363
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI1499DH-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage8 V
Drive voltage (Max rds on, min rds on)1.2V, 4.5V
Current - continuous drain (Id) @ 25°C1.6A (Tc)
Power dissipation2.5W (Ta), 2.78W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±5V
TechnologyMOSFET (Metal Oxide)
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id800mV @ 250µA
Rds on (Max) @ id, vgs78mOhm @ 2A, 4.5V
Gate charge (Qg) (Max) @ vgs16 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds650 pF @ 4 V