SI1469DH-T1-E3

Vishay · TrenchFET® Series

MOSFET P-CH 20V 2.7A SC70-6

Vishay SI1469DH-T1-E3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI1469DH-T1-E3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 10V
Current - continuous drain (Id) @ 25°C2.7A (Tc)
Power dissipation1.5W (Ta), 2.78W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs80mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs8.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds470 pF @ 10 V
SI1469DH-T1-E3
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