SI1442DH-T1-GE3

Vishay · TrenchFET® Series

MOSFET N-CH 12V 4A SC70-6

Vishay SI1442DH-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI1442DH-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage12 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C4A (Ta)
Power dissipation1.56W (Ta), 2.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs20mOhm @ 6A, 4.5V
Gate charge (Qg) (Max) @ vgs33 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds1010 pF @ 6 V
SI1442DH-T1-GE3
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