SI1077X-T1-GE3

Vishay · TrenchFET® Series

MOSFET P-CH 20V SC89-6

Vishay SI1077X-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI1077X-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C1.75A (Ta)
Power dissipation330mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs78mOhm @ 1.8A, 4.5V
Gate charge (Qg) (Max) @ vgs31.1 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds965 pF @ 10 V
SI1077X-T1-GE3
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