Skip to main content
Vishay SI1077X-T1-GE3

Vishay SI1077X-T1-GE3

MPNSI1077X-T1-GE3
End of Life

MOSFET P-CH 20V SC89-6

$0.5Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI1077X-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C1.75A (Ta)
Power dissipation330mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs78mOhm @ 1.8A, 4.5V
Gate charge (Qg) (Max) @ vgs31.1 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds965 pF @ 10 V