SI1070X-T1-GE3
Vishay · TrenchFET® Series
MOSFET N-CH 30V 1.2A SC89-6
[IN STOCK] In Stock: 5 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 1.2A (Ta) |
| Power dissipation | 236mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | SOT-563, SOT-666 |
| Vgs(th) (Max) @ id | 1.55V @ 250µA |
| Rds on (Max) @ id, vgs | 99mOhm @ 1.2A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 8.3 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 385 pF @ 15 V |
SI1070X-T1-GE3
[ALLOC] verified