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Vishay SI1050X-T1-GE3

Vishay SI1050X-T1-GE3

MPNSI1050X-T1-GE3
End of Life

MOSFET N-CH 8V 1.34A SC89-6

$0.52Ref. price · indicative, final on quote
PackagingSOT-563, SOT-666
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI1050X-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage8 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C1.34A (Ta)
Power dissipation236mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±5V
TechnologyMOSFET (Metal Oxide)
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs86mOhm @ 1.34A, 4.5V
Gate charge (Qg) (Max) @ vgs11.6 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds585 pF @ 4 V