SI1025X-T1-GE3

Vishay · TrenchFET® Series

MOSFET 2P-CH 60V 0.19A SC-89

Vishay SI1025X-T1-GE3
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI1025X-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET type2 P-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C190mA
Power - max250mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs4Ohm @ 500mA, 10V
Gate charge (Qg) (Max) @ vgs1.7nC @ 15V
Input capacitance (Ciss) (Max) @ vds23pF @ 25V
SI1025X-T1-GE3
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