S5MS-E3/9AT

Vishay

DIODE GEN PURP 1KV 1.6A DO214AB

Vishay S5MS-E3/9AT
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[IN STOCK] In Stock: 557 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

S5MS-E3/9AT specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if940 mV @ 2.5 A
Current - reverse leakage @ vr10 µA @ 1000 V
Current - average rectified1.6A
Operating temperature - junction-55°C ~ 150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-214AB, SMC
Capacitance @ vr,40pF @ 4V, 1MHz
Reverse recovery time2.5 µs
S5MS-E3/9AT
[ALLOC] verified
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