S07M-GS08

Vishay

DIODE GEN PURP 1KV 1.5A DO219AB

Vishay S07M-GS08
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

S07M-GS08 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr10 µA @ 1000 V
Current - average rectified1.5A
Operating temperature - junction-55°C ~ 150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseDO-219AB
Capacitance @ vr,4pF @ 4V, 1MHz
Reverse recovery time1.8 µs
S07M-GS08
[ALLOC] verified
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