NSB8JT-E3/81

Vishay

DIODE GEN PURP 600V 8A TO263AB

Vishay NSB8JT-E3/81
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[IN STOCK] In Stock: 2 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

NSB8JT-E3/81 specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 8 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified8A
Operating temperature - junction-55°C ~ 150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Capacitance @ vr,55pF @ 4V, 1MHz
NSB8JT-E3/81
[ALLOC] verified
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