IRLI640GPBF
Vishay
MOSFET N-CH 200V 9.9A TO220-3
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 4V, 5V |
| Current - continuous drain (Id) @ 25°C | 9.9A (Tc) |
| Power dissipation | 40W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack, Isolated Tab |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 180mOhm @ 5.9A, 5V |
| Gate charge (Qg) (Max) @ vgs | 66 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1800 pF @ 25 V |
IRLI640GPBF
[ALLOC] verified